LSISAS2X36

Description

The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently.

Features

•HIGH PERFORMANCE E2CMOS®TECHNOLOGY
—3.5 ns Maximum Propagation Delay
—Fmax = 250 MHz
—3.0 ns Maximum from Clock Input to Data Output
—UltraMOS® Advanced CMOS Technology
•50% to 75% REDUCTION IN POWER FROM BIPOLAR
—75mA Typ Icc on Low Power Device
—45mA Typ Icc on Quarter Power Device
•ACTIVE PULL-UPS ON ALL PINS
•E2CELL TECHNOLOGY
—Reconfigurable Logic
—Reprogrammable Cells
—100% Tested/100% Yields
—High Speed Electrical Erasure (<100ms)
—20 Year Data Retention
•EIGHT OUTPUT LOGIC MACROCELLS
—Maximum Flexibility for Complex Logic Designs
—Programmable Output Polarity
—Also Emulates 20-pin PAL® Devices with Full Function/Fuse Map/Parametric Compatibility
•PRELOAD AND POWER-ON RESET OF ALL REGISTERS
—100% Functional Testability
•APPLICATIONS INCLUDE:
—DMA Control
—State Machine Control
—High Speed Graphics Processing
—Standard Logic Speed Upgrade
•ELECTRONIC SIGNATURE FOR IDENTIFICATION