PC28F320J3C110

Product Details

__

Intel StrataFlash® Memory (J3)

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3) device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bitper-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future devices.

Product Features

■ Performance
—110/115/120/150 ns Initial Access Speed
—125 ns Initial Access Speed (256 Mbit density only)
—25 ns Asynchronous Page mode Reads
—30 ns Asynchronous Page mode Reads (256Mbit density only)
—32-Byte Write Buffer
—6.8 µs per byte effective programming time
■ Software
—Program and Erase suspend support
—Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
■ Security
—128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
—Absolute Protection with VPEN = GND
—Individual Block Locking
—Block Erase/Program Lockout during Power Transitions
■ Architecture
—Multi-Level Cell Technology: High Density at Low Cost
—High-Density Symmetrical 128-Kbyte Blocks
—256 Mbit (256 Blocks) (0.18µm only)
—128 Mbit (128 Blocks)
—64 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
■ Quality and Reliability
—Operating Temperature: -40 °C to +85 °C
—100K Minimum Erase Cycles per Block
—0.18 µm ETOX™ VII Process (J3C)
—0.25 µm ETOX™ VI Process (J3A)
■ Packaging and Voltage
—56-Lead TSOP Package
—64-Ball Intel® Easy BGA Package
—Lead-free packages available
—48-Ball Intel® VF BGA Package (32 and 64 Mbit) (x16 only)
—VCC = 2.7 V to 3.6 V
—VCCQ = 2.7 V to 3.6 V