HN29W256SH02TE-1

Description

The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611 are more than 16,057 (98% of all sector address) and less than 16,384 sectors.

Features

• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Organization
- AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
- Data register: (2048 + 64) bytes
• Multi-level memory cell
- 2 bit/per memory cell
• Automatic programming
- Sector program time: 3.0 ms (typ)
- System bus free
- Address, data latch function
- Internal automatic program verify function
- Status data polling function
• Automatic erase
- Single sector erase time: 1.5 ms (typ)
- System bus free
- Internal automatic erase verify function
- Status data polling function
• Erase mode
- Single sector erase ((2048 + 64) byte unit)
• Fast serial read access time:
- First access time: 50 µs (max)
- Serial access time: 50 ns (max)
• Low power dissipation:
- ICC2 = 50 mA (max) (Read)
- ISB2 = 50 µA (max) (Standby)
- ICC3/ICC4 = 40 mA (max) (Erase/Program)
- ISB3 = 5 µA (max) (Deep standby)
• The following architecture is required for data reliability.
- Error correction: more than 3-bit error correction per each sector read
- Spare sectors: 1.8% (290 sectors) within usable sectors